WebA Study on the Cleaning Characteristics according to the process gas of Low-Pressure Plasma. ... CHF3 플라즈마는 CFx/F의 비율을 낮출 수 있는 첨가기체가 필요함을 알 수 있었다. CHF3에 아르곤을 첨가하였을 경우에는 원활한 세정효과를 얻을 수 없었으나, 산소를 첨가하였을 경우 좋은 ... WebCHF 3 is used in the semiconductor industry in plasma etching of silicon oxide and silicon nitride. Known as R-23 or HFC-23, it was also a useful refrigerant, sometimes as a replacement for chlorotrifluoromethane (CFC-13) and is a byproduct of its manufacture. When used as a fire suppressant, the fluoroform carries the DuPont trade name, FE-13.
Characteristics of ITO films with oxygen plasma ... - ScienceDirect
Webthe CHF3/0, plasma was found to completely prevent the formation of residues in the etched regions. Possible mechanisms responsible for the prevention of residues include the formation of volatile Al-H compounds and the enhanced etching of the C-rich surface. Silicon carbide is a semiconductor exhibiting certain ... Webdepends on the F density in the plasma and the effects of ion bombardment. The process conditions for a high etch selectivity are a 0.3 to 0.5 CF4 flow ratio and a –600 V to –650 V DC bias voltage according to the process pressure in our experiment. Etching uniformity was improved with an increase in the CF4 flow ratio in the gas mixture, an kozy heat springfield 36
University of Houston
WebThe etching characteristics of SiO2} have been investigated in the CHF3} gas plasma using the planar type reactor with the 400 kHz rf power. The etch rate of SiO2}, the SiO2} /Si … WebMay 14, 2024 · Rightslink® by Copyright Clearance Center WebNov 1, 2024 · In this work, we performed the comparative study of plasma parameters, steady-state gas phase compositions and Si reactive-ion etching kinetics in CF4 + O2 + Ar, CHF3 + O2 + Ar and C4F8 + O2 + Ar ... manual for ge dishwasher gdf540